2013/10/29 ver.1 page 1 SPN50T10 n-channel enhancement mode mosfet description applications the SPN50T10 is the n-channe l logic enhancement mode power field effect transistor which is produced using super high cell density dmos trench technology. the spn80t10 has been designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. ? powered system ? dc/dc converter ? load switch features pin configuration ? 100v/65a, r ds(on) =18m ? @v gs = 10v ? high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? to-220 package design to-220 part marking
2013/10/29 ver.1 page 2 SPN50T10 n-channel enhancement mode mosfet pin description pin symbol description 1 g gate 2 d drain 3 s source ordering information part number package part marking SPN50T10t220tgb to-220-3l SPN50T10 SPN50T10t220tgb : tube ; pb ? free ; halogen - free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 100 v gate ?source voltage v gss 20 v continuous drain current(t j =150 ) t a =25 i d 65 a t a =70 40 pulsed drain current i dm 200 a power dissipation @ t a =25 p d 166 w operating junction temperature t j -55/150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 62 /w
2013/10/29 ver.1 page 3 SPN50T10 n-channel enhancement mode mosfet electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 100 v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 2.0 4.0 gate leakage current i gss v ds =0v,v gs =20v 100 na zero gate voltage drain current i dss v ds =80v,v gs =0v 25 ua v ds =80v,v gs =0v t j =125 100 drain-source on-resistance r ds(on) v gs = 10v,i d =30a 18 m ? forward transconductance gfs v ds =10v,i d =30a 75 s diode forward voltage v sd i s =30a,v gs =0v 1.3 v dynamic total gate charge q g v ds =80v,v gs =10v i d = 40a 115 180 nc gate-source charge q gs 20 gate-drain charge q gd 48 input capacitance c iss v ds =25,v gs =0v f=1mhz 6000 9600 pf output capacitance c oss 550 reverse transfer capacitance c rss 300 turn-on time t d(on) v dd =50v,r l =1 ? i d 30a,v gen =10v r g =1.66 ? 21 ns t r 58 turn-off time t d(off) 41 t f 15
2013/10/29 ver.1 page 4 SPN50T10 n-channel enhancement mode mosfet typical characteristics
2013/10/29 ver.1 page 5 SPN50T10 n-channel enhancement mode mosfet typical characteristics
2013/10/29 ver.1 page 6 SPN50T10 n-channel enhancement mode mosfet typical characteristics
2013/10/29 ver.1 page 7 SPN50T10 n-channel enhancement mode mosfet to-220 package outline
2013/10/29 ver.1 page 8 SPN50T10 n-channel enhancement mode mosfet information provided is alleged to be exact and consistent. sync power corporation presumes no responsibility for the penalties of use of such information or for any violation of pa tents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise under any pate nt or patent rights of sync power corporation. conditions mentioned in this publication ar e subject to change without notice. this p ublication surpasses and replaces all information previously supplied. sync power corporation products are not authorized for use as critical components in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of sync power corporation ?2004 sync power corporation ? printed in taiwan ? all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan 115 phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com
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